PART |
Description |
Maker |
AT49BV1024A |
1-megabit (64K x 16) 3-volt Only Flash Memory
|
ATMEL Corporation
|
AT45DB041B-SC-2.5 AT45DB041B-TC-2.5 AT45DB041B-TI |
MOSFET N-CH 200V 105A ISOPLUS247 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO28 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. ATMEL Corporation Atmel, Corp.
|
AT29LV1024 AT29LV1024-15TC |
1 Megabit (64K X 16) 3-volt Only CMOS Flash Memory,15mA Active Current,0.05mA Standby Current From old datasheet system
|
ATMEL
|
HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory 8 Megabit (1M x 8), 5 Volt-only, Flash Memory IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
S29GL032N90TFI040 S29GL032N90TFI042 S29GL032N90TFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
SPANSION
|
AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta DB25SC37 DSUB 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. PROM Spansion, Inc. SPANSION LLC
|
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AT25DF041A-SSHF-B AT25DF041A-SSHF-T AT25DF041A-SSH |
4-megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|
AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启 x8/x16 Flash EEPROM x8/x16闪存EEPROM 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company Atmel, Corp. AMIC Technology, Corp. Advanced Micro Devices, Inc. ATMEL[ATMEL Corporation]
|
AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory Gate Driver; Package: PG-DSO-8; RthJA (max): -; 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位)的CMOS 3.0伏特,只有扇区擦除闪 CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位)的CMOS 3.0伏特,只有扇区擦除闪
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|